Effects of O2/Ar ratio and annealing on the properties of (Ba,Sr)TiO3 films prepared by RF magnetron sputtering

被引：28

作者：

Lee, J

Choi, YC

Lee, BS ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Dept Mat Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[3] Konkuk Univ, Dept Ind Chem, Seoul 133701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 6A期

关键词：

(Ba; Sr)TiO3; RF magnetron sputtering; annealing; O-2/Ar ratio; dielectric constant; leakage current density; grain size; surface roughness;

D O I：

10.1143/JJAP.36.3644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Perovskite-structure (Ba,Sr)TiO3 (BST) thin films were prepared on Pt/SiO2/Si substrates by RF magnetron sputtering with various O-2/Ar ratios and subsequent annealing. The crystallinity and electrical properties of the films were investigated. It was demonstrated that the electrical properties, such as leakage current and capacitance, of the films depend strongly on the oxygen content of the sputtering gas. With increasing oxygen content of the sputtering gas, the leakage current decreases and the capacitance increases. Both the dielectric constant and the leakage current density increase upon annealing. It is believed that the electrical properties of BST films depend strongly on the grain size and surface roughness of the films.

引用

页码：3644 / 3648

页数：5

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