Multiring Circular Transmission Line Model for Ultralow Contact Resistivity Extraction

被引：66
|
作者：
Yu, Hao [1 ,2 ]
Schaekers, Marc [2 ]
Schram, Tom [2 ]
Rosseel, Erik [2 ]
Martens, Koen [1 ,2 ]
Demuynck, Steven [2 ]
Horiguchi, Naoto [2 ]
Barla, Kathy [2 ]
Collaert, Nadine [2 ]
De Meyer, Kristin [1 ,2 ]
Thean, Aaron [2 ]
机构：
[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
[2] IMEC, B-3001 Leuven, Belgium
来源：
IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 06期
关键词：
Contact resistance; transmission line model; circular transmission line model; simulation; RESISTANCE; METAL;
D O I：
10.1109/LED.2015.2425792
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Accurate determination of contact resistivities (rho(c)) below 1 x 10(-8) Omega center dot cm(2) is challenging. Among the frequently applied transmission line models (TLMs), circular TLM (CTLM) has a simple process flow, while refined TLM (RTLM) has a high rho(c) accuracy at the expense of a more complex fabrication. In this letter, we will present a novel model-multiring CTLM (MR-CTLM), which combines the advantages of a simple process and a high rho(c) extraction resolution. We fabricated ultralow-rho(c) Ti/n-Si contacts and demonstrated the capability of MR-CTLM to extract the rho(c) as low as 6.2 x 10(-9) Omega center dot cm(2) with high precision.
引用
收藏
页码：600 / 602
页数：3
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