A Refined Ladder Transmission Line Model for the Extraction of Significantly Low Specific Contact Resistivity
被引:5
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作者:
Sun, Xianglie
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Sun, Xianglie
[1
,2
]
Luo, Jun
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Luo, Jun
[1
,2
]
Liu, Yaodong
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Liu, Yaodong
[1
,2
]
Xu, Jing
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Xu, Jing
[1
,2
]
Gao, Jianfeng
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Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Gao, Jianfeng
[2
]
Liu, Jinbiao
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Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Liu, Jinbiao
[2
]
Zhou, Xuebing
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Zhou, Xuebing
[1
,2
]
He, Yanping
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
He, Yanping
[1
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Kong, Mengjuan
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Kong, Mengjuan
[1
]
Li, Yongliang
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Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Li, Yongliang
[2
]
Li, Junfeng
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Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Li, Junfeng
[2
]
Wang, Wenwu
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Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Wang, Wenwu
[1
]
Ye, Tianchun
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Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China
Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Guangdong Greater Bay Area Inst Integrated Circuit, Guangzhou 510535, Guangdong, Peoples R ChinaUniv Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
Ye, Tianchun
[2
,3
,4
]
机构:
[1] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing, Peoples R China
[3] Univ Chinese Acad Sci, Sch Integrated Circuits, Beijing 100049, Peoples R China
[4] Guangdong Greater Bay Area Inst Integrated Circuit, Guangzhou 510535, Guangdong, Peoples R China
Refined ladder transmission line model (R-LTLM);
specific contact resistivity;
TiSix/n(+)-Si Ohmic contact;
RESISTANCE;
IMPLANTATION;
SILICIDE;
D O I:
10.1109/TED.2022.3221380
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
In this article, a refined ladder transmission line model (R-LTLM) test structure capable of extracting significantly low specific contact resistivity ( $\rho_{\textit{c}}$ ) eliminating parasitic metal resistance is proposed. Theoretical derivations, technology computer-aided design (TCAD) simulations, and experiments are performed to verify the validity and superiority of R-LTLM. Compared with refined transmission line model (RTLM) and ladder transmission line model (LTLM), R-LTLM not only achieves higher extraction accuracy than RTLM but also relieves the impact of process variation during the formation of contact area patterns and contact spacings. Moreover, the impacts of process variation on the extraction of rho(c) using LTLM and R-LTLM are analyzed. As for experimental verification, RTLM, LTLM, and R-LTLM test structures are fabricated to extract rho(c) of TiSix/n(+) -Si Ohmic contacts. Results show that R-LTLM can eliminate parasitic metal resistance, leading to higher extraction accuracy than RTLM.