Strain-relieving ridge structure in a wetting layer on the W(110) surface

被引：1
|
作者：
Kim, TH
Seo, J
Choi, J
Choi, BY
Song, YJ
Kuk, Y
Kahng, SJ
机构：
[1] Korea Univ, Dept Phys, Seoul 136713, South Korea
[2] Seoul Natl Univ, Dept Phys, Seoul 151747, South Korea
[3] Seoul Natl Univ, Ctr Sci Nanometer Scale, Seoul 151747, South Korea
来源：
SURFACE SCIENCE | 2005年 / 595卷 / 1-3期
基金：
新加坡国家研究基金会;
关键词：
scanning tunneling microscopy; epitaxy; nanostructures; surface structure;
D O I：
10.1016/j.susc.2005.07.034
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The growth behavior and atomic structure of the Ag wetting layer grown on the W(110) surface, was studied with scanning tunneling microscopy. Deposited Ag atoms preferentially adsorb at the step edges and reveal a step-flow growth behavior at room temperature. In the Ag wetting layer, a periodic bright ridge structure was observed along the [3 3 7] and [3 3 7] directions. The atomic registry of the ridge structure is proposed on the basis of atomically resolved images. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码：30 / 34
页数：5
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