Evaluation of performance of proximity effect correction in electron projection lithography

We experimentally evaluated the overall performance of our proximity effect correction method in electron projection lithography. A Si stencil mask for corrected data was fabricated and then exposed using an electron-beam stepper. Shape modification resulted in high linewidth controllability and uniformity of critical dimension (CD) even when the pattern density changed. The deviation in linewidth was 6.6 nm in linearity, and 4.7 nm in the pattern density dependence of a 100 nm line. As well as shape modification, we reduced the pattern density of large patterns by replacing the interior area with mesh patterns in order to produce isolated space patterns. The meshes were well fabricated on the mask. Isolated spaces were successfully formed without resolving the mesh patterns on a resist.