Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

被引：6
|
作者：
Yu, K
Zhu, ZQ
Wang, WM
Chen, SQ
Li, Q
Chen, Q
Lu, W
Zi, J
机构：
[1] E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China
[2] E China Normal Univ, Analyt Ctr, Shanghai 200062, Peoples R China
[3] Chinese Acad Sci, Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
[4] Shandong Univ, Sch Phys & Microelect, Jinan 250061, Peoples R China
[5] Fudan Univ, Natl Key Lab Appl Surface Phys, Shanghai 200433, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2004年 / 129卷 / 09期
基金：
中国国家自然科学基金;
关键词：
silicon nanocrystallites; electron field emission;
D O I：
10.1016/j.ssc.2003.12.013
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/mum at current density of 0.1 muA/cm(2) was obtained. The emission current density from the SiNC films reached 1 mA/cm(2) under a bias field of about 11 V/mum. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：555 / 558
页数：4
相关论文
共 50 条
  • [31] Efficient infrared emission from patterned thin metal films on a Si photonic crystal
    Theodoni, P.
    Vamvakas, V. Ern.
    Speliotis, Th.
    Chatzichristidi, M.
    Bayiati, P.
    Raptis, I.
    Papanikolaou, N.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (11): : 2581 - 2584
  • [32] THERMIONIC FIELD-EMISSION IN POLYCRYSTALLINE-SILICON FILMS
    LU, NCC
    GERZBERG, L
    LU, CY
    MEINDL, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C396 - C396
  • [33] Fabrication of silicon carbide thin films and their field emission properties
    Xi'an Institute of Optics and Precision Mechanics, Chinese Acad. of Sci., Xi'an 710068, China
    不详
    Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban), 2008, 1 (28-32): : 28 - 32
  • [34] Field emission from carbon and silicon films with pillar microstructure
    Colgan, MJ
    Brett, MJ
    THIN SOLID FILMS, 2001, 389 (1-2) : 1 - 4
  • [35] Silicon Field Emission Arrays Coated with CNx Thin Films
    Chen Ming\|an
    WuhanUniversityJournalofNaturalSciences, 2003, (03) : 825 - 828
  • [36] PROPERTIES OF SILICON FILMS PRODUCED BY FIELD-EMISSION DEPOSITION
    PANG, TM
    PREWETT, PD
    GOWLAND, L
    THIN SOLID FILMS, 1982, 88 (03) : 219 - 224
  • [37] Effect of nitrogen doping on field emission characteristics of patterned diamond-like carbon films prepared by pulsed laser deposition
    Shin, IH
    Lee, TD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (02): : 1027 - 1030
  • [38] Field emission characteristics of thin MPCVD diamond films
    Engemann, J
    Fedosenko, G
    Raiko, V
    Theirich, D
    ADVANCED TECHNOLOGIES BASED ON WAVE AND BEAM GENERATED PLASMAS, 1999, 67 : 479 - 480
  • [39] Field emission characteristics of orthorhombic boron nitride films
    Li, Weiqing
    Zha, Yongnian
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 650 - +
  • [40] The patterned electron field emission of printed carbon nanotube films by image transfer technology
    Feng, Tao
    Chen, Yiwei
    Hui, Ding
    Sun, Zhuo
    VACUUM, 2010, 85 (04) : 527 - 530
12345