Patterned uniformly orientated silicon nanocrystallite films and efficient field emission characteristics

Patterned uniformly (100)-orientated silicon nanocrystallite (SiNC) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and microstructure characteristics of the films were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, and atomic force microscopy. The efficient field emission with low turn-on field of about 3.2 V/mum at current density of 0.1 muA/cm(2) was obtained. The emission current density from the SiNC films reached 1 mA/cm(2) under a bias field of about 11 V/mum. The experimental results demonstrate that the SiNC films have great potential applications for flat panel displays. (C) 2003 Elsevier Ltd. All rights reserved.