Optical switching applications of ZnSe/MgF2 photonic band gap structures based on thermal nonlinearities

We investigate a thermo-optical device based on a ZnSe/MgF2 multilayer and demonstrate the modulation of its optical reflectance around the band edge. An electrically induced temperature increase is responsible for the change of the refractive indices of the layers. As a result, the reflection spectrum shifts and the reflected signal decreases. The structure was grown using a thermal evaporation technique, and was designed in such a way that a band edge appears at 632.8 nm, i.e. accessible to a low-power He-Ne laser. The reflection characteristics were investigated as a function of the applied voltage and we found that the photonic band edge shifts by a maximum of 7 nm for an applied voltage of 90 V. Furthermore, different sets of measurements have shown that the spectral shift depends on the voltage squared, thus allowing experimental data analysis in terms of the thermally driven optical nonlinearity.