Enhanced photoelectrical performance of chemically processed SnS2 nanoplates

In this work, tin disulfide (SnS2) nanoplates have been synthesized through a facile hydrothermal method. The structural and morphological properties of SnS2 were investigated via scanning electron microscopy (SEM) which actually revealed the nanoplates like morphology of the obtained samples. Heterojunction diodes comprising SnS2 nanoplates and p-type silicon (Si) were fabricated and been demonstrated. Their electrical properties were studied using current-voltage characteristics and impedance spectroscopy. The diodes were found to exhibit excellent rectifying behavior with significant increase in reverse current under illumination. Impedance results identified the resistance of the device to reduce considerably under light irradiation. The enhanced photoelectrical properties of the heterojunctions were actually promoted by the electric field at the heterojunction interface, which further results with the effective separation of photogenerated electron hole pairs. The obtained results also suggest the potential of chemically processed SnS2 nanoplates for applications in photodetection and sensors applications.