ZnO-sheathed SiOx nanowires:: Annealing effect

被引：9
|
作者：
Kim, Hyoun Woo [1 ]
Shim, Seung Hyun [1 ]
Lee, Jong Woo [1 ]
Lee, Chongmu [1 ]
Jeoung, Sae Chae [2 ]
机构：
[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea
[2] Korea Res Inst Stand & SCi, Div Adv Technol, Taejon 305340, South Korea
来源：
OPTICAL MATERIALS | 2008年 / 30卷 / 07期
关键词：
ZnO; nanowires; thermal annealing;
D O I：
10.1016/j.optmat.2007.05.052
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This study reported the preparation of ZnO-coated SiOx, nanowires and investigated changes in the structural and photoluminescence (PL) characteristics resulting from application of a thermal annealing process. While X-ray diffraction (XRD) analysis revealed the annealing-induced transformation of ZnO to Zn2SiO4, transmission electron microscopy (TEM) observation suggested that shell layer tended to be transformed to nanoparticle-like structures by thermal annealing. Thermal annealing induced the changes in the shape of the PL emission spectrum. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1221 / 1224
页数：4
相关论文
共 50 条
  • [21] Effect of growth time and annealing on the structural defect concentration of hydrothermally grown ZnO nanowires
    Chevalier-Cesar, Clotaire
    Capochichi-Gnambodoe, Martine
    Lin, Fang
    Yu, Dapeng
    Leprince-Wang, Yamin
    AIMS MATERIALS SCIENCE, 2016, 3 (02) : 562 - 572
  • [22] Annealing-induced conductivity transition in ZnO nanowires for field-effect devices
    Jeon, Pyo Jin
    Lee, Young Tack
    Ha, Ryong
    Choi, Heon-Jin
    Yoon, Kwan Hyuck
    Sung, Myung M.
    Im, Seongil
    APPLIED PHYSICS LETTERS, 2012, 101 (04)
  • [23] The effect of annealing temperature, residual O2 partial pressure, and ambient flow rate on the growth of SiOx nanowires
    Yi Yang
    Avi Shalav
    Taehyun Kim
    Robert G. Elliman
    Applied Physics A, 2012, 107 : 885 - 890
  • [24] Influence of annealing on the optoelectronic properties of the GLAD synthesized SiOx–ZnO heterostructure nanoclusters
    Rajshree Rajkumari
    Naorem Khelchand Singh
    Applied Physics A, 2018, 124
  • [25] Diamond nanocrystals and amorphous SiOx nanowires formed by rapid thermal annealing of carbon film
    Liang, Xingbo
    Wang, Lei
    Li, Xiaoqiang
    Yang, Deren
    THIN SOLID FILMS, 2007, 515 (17) : 6707 - 6712
  • [26] Annealing behavior of TiO2-sheathed Ga2O3 nanowires
    Changhyun Jin
    Hyunsoo Kim
    Kyungjoon Baek
    Hyoun Woo Kim
    Chongmu Lee
    Journal of Materials Science: Materials in Electronics, 2010, 21 : 1154 - 1158
  • [27] Annealing behavior of TiO2-sheathed Ga2O3 nanowires
    Jin, Changhyun
    Kim, Hyunsoo
    Baek, Kyungjoon
    Kim, Hyoun Woo
    Lee, Chongmu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2010, 21 (11) : 1154 - 1158
  • [28] Annealing behavior of TiO2-sheathed Ga2O3 nanowires
    Jin, Changhyun
    Kim, Hyunsoo
    Baek, Kyungjoon
    Lee, Chongmu
    TMS 2010 139TH ANNUAL MEETING & EXHIBITION - SUPPLEMENTAL PROCEEDINGS, VOL 3: GENERAL PAPER SELECTIONS, 2010, : 431 - 446
  • [29] Efficient production of ZnO nanowires by a ball milling and annealing method
    Glushenkov, A. M.
    Zhang, H. Z.
    Zou, J.
    Lu, G. Q.
    Chen, Y.
    NANOTECHNOLOGY, 2007, 18 (17)
  • [30] Arsenic doping of ZnO nanowires by post-annealing treatment
    Lee, W
    Jeong, MC
    Joo, SW
    Myoung, JM
    NANOTECHNOLOGY, 2005, 16 (06) : 764 - 768
12345