A new method of determination of parameters of traps in semiconductors

A new technique for the determination of parameters of trap levels in semiconductors is examined. This method is based on the dependence of the dynamic negative resistance (DNR) in absolute value on the concentration of traps in injection-transit-time diodes. It was established by us earlier that a maximum value of DNR should be observed at an appropriate transit angle the meaning of which is a definite function of concentration, energetic level and capture cross-section of minority charge carriers. Using corresponding analytical expressions and results of microwave measurements it is possible to obtain the values of the above-mentioned parameters of traps.