Elastic behavior of Bi2Se3 2D nanosheets grown by van der Waals epitaxy

被引：27
|
作者：
Yan, Haoming [1 ,2 ]
Vajner, Cooper [1 ,2 ]
Kuhlman, Michael [1 ,2 ]
Guo, Lingling [1 ,2 ]
Li, Lin [2 ,3 ]
Araujo, Paulo T. [2 ,4 ]
Wang, Hung-Ta [1 ,2 ]
机构：
[1] Univ Alabama, Dept Chem & Biol Engn, Tuscaloosa, AL 35487 USA
[2] Univ Alabama, Ctr Mat Informat Technol, MINT Ctr, Tuscaloosa, AL 35487 USA
[3] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA
[4] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA
来源：
APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 03期
关键词：
TOPOLOGICAL INSULATORS; BANDGAP TRANSITION; STRAIN; MONOLAYER; MOS2; STRENGTH; GRAPHENE; BILAYER; BI2TE3;
D O I：
10.1063/1.4958986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Elastic properties of bismuth selenite (Bi2Se3) two-dimensional (2D) nanosheets were investigated using atomic force microscope (AFM) nanoindentations. Bi2Se3 2D nanosheets were synthesized by van der Waals epitaxy and subsequently transferred on SiO2/Si substrates containing pre-fabricated hole arrays. The suspension of 2D nanosheets was confirmed via the distinct optical contrast characteristics and AFM. In nanoindentations, the correlation between a point force load and the elastic response in the deformation depth was found being thickness-dependent, between 7 and 12 quintuple layers. The Young's modulus, E = 17.86-25.45 GPa (fitted value = 20.67 GPa), and the pretension, T = 0.0218-0.0417 N/m, acquired according to the bending plate regime are consistent with ones from the stretching membrane regime. Furthermore, these Bi2Se3 2D nanosheets could elastically endure a 4.0%-8.3% strain before being ruptured with AFM tips. Compliant and robust elastic properties of Bi2Se3 2D nanosheets, as observed, provide a feasible way for exploring the topological phase transition. Published by AIP Publishing.
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页数：5
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