Solution-processed naphthalene diimide derivatives as n-type semiconductor materials

被引:42
|
作者
Lee, Ya-Lien [1 ]
Hsu, Hui-Lin [1 ]
Chen, Szu-Ying [1 ]
Yew, Tri-Rung [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
来源
JOURNAL OF PHYSICAL CHEMISTRY C | 2008年 / 112卷 / 05期
关键词
D O I
10.1021/jp076278w
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two soluble 1,4,5,8-naphthalenetetracarboxylic diimide (NTCDI) derivatives with phenylmethyl and (trifluoromethyl)benzyl groups (NTCDI-P and NTCDI-F, respectively) were synthesized and used as semiconductor layers in organic thin-film transistors (OTFTs) by a spin-coating process in air. These two synthesized materials were characterized by H-1 NMR and UV-vis spectra as well as mass analysis. The morphology and crystallinity of spin-coated NTCDI-P and NTCDI-F films have been inspected using atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The channel mobilities of these two NTCDI derivatives were calculated to be about 1.2 x 10(-1) cm(2) V-1 s(-1) in air, which degraded slightly while stabilized for NTCDI-F OTFTs after exposure in air for 1 month.
引用
收藏
页码:1694 / 1699
页数:6
相关论文
共 50 条
  • [41] Enhanced N-Type Doping of a Naphthalene Diimide Based Copolymer by Modification of the Donor Unit
    Cassinelli, Marco
    Cimo, Simone
    Biskup, Till
    Jiao, Xuechen
    Luzio, Alessandro
    McNeill, Christopher R.
    Noh, Yong-Young
    Kim, Yun-Hi
    Bertarelli, Chiara
    Caironi, Mario
    ADVANCED ELECTRONIC MATERIALS, 2021, 7 (12)
  • [42] Solution-processed graphene materials and composites
    Laila Jaber-Ansari
    Mark C. Hersam
    MRS Bulletin, 2012, 37 : 1167 - 1175
  • [43] Electronic materials for solution-processed TFTs
    Acharya, Vishwas
    Agarwal, Kushagra
    Mondal, Sandip
    MATERIALS RESEARCH EXPRESS, 2023, 10 (08)
  • [44] Solution-processed graphene materials and composites
    Jaber-Ansari, Laila
    Hersam, Mark C.
    MRS BULLETIN, 2012, 37 (12) : 1167 - 1175
  • [45] Solution-Processed, Molecular Photovoltaics that Exploit Hole Transfer from Non Fullerene, n-Type Materials (vol 25, pg 4313, 2014)
    Douglas, Jessica D.
    Chen, Mark S.
    Niskala, Jeremy R.
    Lee, Olivia P.
    Yiu, Alan T.
    Young, Eric P.
    Frechet, Jean M. J.
    ADVANCED MATERIALS, 2014, 26 (27) : 4606 - 4606
  • [46] A thermally resistant and air-stable n-type organic semiconductor: Naphthalene diimide of 3,5-bis-trifluoromethyl aniline
    Jung, Yunoh
    Baeg, Kang-Jun
    Kim, Dong-Yu
    Someya, Takao
    Park, Soo Young
    SYNTHETIC METALS, 2009, 159 (19-20) : 2117 - 2121
  • [47] Enhancing the Performance of Solution-Processed n-Type Organic Field-Effect Transistors by Blending with Molecular "Aligners"
    Zhang, Yue
    Hanifi, David
    Lim, Eunhee
    Chourou, Slim
    Alvarez, Steven
    Pun, Andrew
    Hexemer, Alexander
    Ma, Biwu
    Liu, Yi
    ADVANCED MATERIALS, 2014, 26 (08) : 1223 - 1228
  • [48] Solution-processed n-type organic thin-film transistors with high field-effect mobility
    Chikamatsu, M
    Nagamatsu, S
    Yoshida, Y
    Saito, K
    Yase, K
    Kikuchi, K
    APPLIED PHYSICS LETTERS, 2005, 87 (20) : 1 - 3
  • [49] Highly Passivated n-Type Colloidal Quantum Dots for Solution-Processed Thermoelectric Generators with Large Output Voltage
    Nugraha, Mohamad I.
    Kim, Hyunho
    Sun, Bin
    Desai, Saheena
    de Arquer, F. Pelayo Garcia
    Sargent, Edward H.
    Alshareef, Husam N.
    Baran, Derya
    ADVANCED ENERGY MATERIALS, 2019, 9 (28)
  • [50] Poly(fluorene-alt-naphthalene diimide) as n-Type Polymer Electrodes for Energy Storage
    Sarang, Kasturi T.
    Miranda, Andrea
    An, Hyosung
    Oh, Eun-Suok
    Verduzco, Rafael
    Lutkenhaus, Jodie L.
    ACS APPLIED POLYMER MATERIALS, 2019, 1 (05) : 1155 - 1164