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A unified cubic flux-controlled memristor: theoretical analysis, simulation and circuit experiment

被引：28
|
作者：
Liu, Wei [1 ]
Wang, Fa-Qiang [1 ]
Ma, Xi-Kui [1 ]
机构：
[1] Xi An Jiao Tong Univ, Sch Elect Engn, State Key Lab Elect Insulat & Power Equipment, Xian 710049, Peoples R China
来源：
INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2015年 / 28卷 / 03期
基金：
中国国家自然科学基金;
关键词：
memristor; parameter analysis; mem-frequency band; CHUAS CIRCUIT;
D O I：
10.1002/jnm.2009
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a unified cubic flux-controlled memristor is proposed, and how to choose its parameters to obtain an appropriate memristor is investigated. The relevant frequency band of the exciting source that enables the memristor to keep its characteristics (call it mem-frequency band) is analyzed, and the matter of high mem-frequency is also clinched. Based on the trend of their i-v curves versus time, the memristors are divided into two types: P and N. The design, simulations and experiments of the circuits for the presented memristor model are given to describe its dynamical behaviors. The results from simulations and experiments are in good agreement with the theoretical analysis, which are of special guidance for designing such device to satisfy the requirements in practical engineering. Copyright (c) 2014 John Wiley & Sons, Ltd.
引用
收藏
页码：335 / 345
页数：11
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