Effect of traceable nitrogen from low-pressure plasma nitriding on diamond growth over WC-co cemented carbides

被引:7
|
作者
Peng, Jihua [1 ]
Xiao, Yang [1 ]
Peng, Yinglong [2 ]
Zeng, Jiwei [1 ]
机构
[1] South China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510640, Peoples R China
[2] South China Univ Technol, Sch Med, Guangzhou 510006, Peoples R China
关键词
Co-cemented carbide alloy; Plasma-nitriding pretreatment; Diamond coating; HFCVD; Microstructure; FILM GROWTH; PRETREATMENT; SUBSTRATE; COATINGS; HFCVD; PERFORMANCE; IMPROVEMENT; ADHESION;
D O I
10.1016/j.diamond.2021.108717
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cemented tungsten carbide alloys with 6% and 12% Co were plasma-nitrided at 600 degrees C in a 6 Pa vacuum in different working gases using a hot filament ion source. Diamond was directly coated onto the nitrided specimens. Surface morphologies and microstructures of the nitrided and diamond-coated specimens were characterized using scanning electron microscopy, electron probe microscopy, X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy. The adhesion between the coating and the substrate was evaluated using Rockwell indentation and the standard DIN-VDI 3198. Selective ion-etching of the surface Co during the low-pressure plasma nitriding introduced roughness and craters on the nitrided surface and created a surface conversion layer with a fixed structure. The nitrided surface is covered with a thin Co 4 N layer that produces a traceable amount of N and can effectively depress the graphitization catalysis of Co species. Diamond coating with adhesion level HF 2-4 can be deposited onto the 6% and 12% WC-Co alloys without chemical etching after the nitriding process.
引用
收藏
页数:9
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