Co-doping for significantly improved thermoelectric figure of merit in p-type Bi1-2xMgxPbxCuSeO oxyselenides

被引:19
|
作者
Sun, Yazhou [1 ]
Zhang, Cencen [1 ]
Cao, Chengming [1 ]
Fu, Jianxin [1 ]
Peng, Liangming [1 ]
机构
[1] Univ Sci & Technol China, Dept Modern Mech Sch Engn Sci, CAS Key Lab Mech Behav & Design Mat, Hefei 230026, Anhui, Peoples R China
关键词
BiCuSeO; Oxyselenide; Thermoelectric; Doping; ELECTRONIC-STRUCTURES; BICUSEO OXYSELENIDES; TRANSPORT-PROPERTIES; PERFORMANCE; PBTE; ENHANCEMENT; SR; NA; CA;
D O I
10.1016/j.ceramint.2017.09.143
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The microstructure, oxidation state and thermoelectric transport properties of Mg and Pb co-doped p-type Bi1-2,MgxPbxCuSeO oxyselenides have been investigated. Pure single BiCuSeO phase are obtained for all the samples without preferential growth in the crystallites. X-ray photoelectron spectroscopy (XPS) results indicate that both Mg and Pb dopants are in the 2+ oxidation state whereas other than the expected Bi3+, higher oxidation -state Bi ions also exist in both the pristine and doped BiCuSeO compounds. The Mg and Pb co-doping yields a remarkable enhancement in the electrical conductivity coupled with a moderate Seebeck coefficient. A pronounced increment in power factor is achieved from 2.54 mu W cm(-1) K-2 for the pristine BiCuSeO to 11.1 mu W cm(-1) K-2 for Bi0.88MK0.06Ph0.06CuSeO at 750 K. In addition to increasing the power factor, Mg and Pb co-doping reduces the lattice thermal conductivity owing to the dopant-induced point defect scattering of phonon. The combination of optimized power factor and intrinsically low lattice thermal conductivity results in a high ZT of 1.19 at 750 K for Bi0.88Mg0.06Pb0.06CuSeO, which is about 3.1 times as large as that for the pristine BiCuSeO.
引用
收藏
页码:17186 / 17193
页数:8
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