Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

被引：18

作者：

Cantoro, M. ^{[1
,2
]}

Wang, G. ^{[1
,3
]}

Lin, H. C. ^{[1
,3
]}

Klekachev, A. V. ^{[1
,2
]}

Richard, O. ^{[1
]}

Bender, H. ^{[1
]}

Kim, T. -G. ^{[1
,3
]}

Clemente, F. ^{[1
]}

Adelmann, C. ^{[1
]}

van der Veen, M. H. ^{[1
]}

Brammertz, G. ^{[1
]}

Degroote, S. ^{[1
]}

Leys, M. ^{[1
]}

Caymax, M. ^{[1
]}

Heyns, M. M. ^{[1
,3
]}

De Gendt, S. ^{[1
,4
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 01期

关键词：

III-V semiconductors; electronic transport; InAs; MOVPE; nanowires; Raman spectroscopy; III-V NANOWIRES; OPTOELECTRONIC DEVICES; SILICON NANOWIRES; EPITAXIAL-GROWTH; SCATTERING; TRANSISTORS;

D O I：

10.1002/pssa.201026396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：129 / 135

页数：7

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