Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE

被引：18

作者：

Cantoro, M. ^{[1
,2
]}

Wang, G. ^{[1
,3
]}

Lin, H. C. ^{[1
,3
]}

Klekachev, A. V. ^{[1
,2
]}

Richard, O. ^{[1
]}

Bender, H. ^{[1
]}

Kim, T. -G. ^{[1
,3
]}

Clemente, F. ^{[1
]}

Adelmann, C. ^{[1
]}

van der Veen, M. H. ^{[1
]}

Brammertz, G. ^{[1
]}

Degroote, S. ^{[1
]}

Leys, M. ^{[1
]}

Caymax, M. ^{[1
]}

Heyns, M. M. ^{[1
,3
]}

De Gendt, S. ^{[1
,4
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Phys & Astron, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Met & Mat Engn, B-3001 Louvain, Belgium

[4] Katholieke Univ Leuven, Dept Chem, B-3001 Louvain, Belgium

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 01期

关键词：

III-V semiconductors; electronic transport; InAs; MOVPE; nanowires; Raman spectroscopy; III-V NANOWIRES; OPTOELECTRONIC DEVICES; SILICON NANOWIRES; EPITAXIAL-GROWTH; SCATTERING; TRANSISTORS;

D O I：

10.1002/pssa.201026396

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we show the results of experiments of InAs nanowire (NW) growth on (111)-oriented Si wafers. The NWs, grown at 620 degrees C by metal-organic vapor-phase epitaxy, are vertically aligned and similar to 30 nm in diameter. Their structural properties are studied by transmission electron microscopy, evidencing a polytypic character, and the vibrational properties by Raman spectroscopy. An assessment of their electrical transport properties is carried out by measuring back-gated, single InAs NW field-effect transistors. The absence of a catalyst ensures the compatibility of the NW growth process with current CMOS technology. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：129 / 135

页数：7

共 50 条

[1] Catalyst-free growth of semiconductor nanowires by selective area MOVPE
Motohisa, J
Noborisaka, F
Hara, S
Inari, M
Fukui, T
PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2005, 772 : 877 - 878
[2] Catalyst-free selective-area MOVPE of semiconductor nanowires
Motohisa, Junichi
Fukui, Takashi
NANOMATERIAL SYNTHESIS AND INTEGRATION FOR SENSORS, ELECTRONICS, PHOTONICS, AND ELECTRO-OPTICS, 2006, 6370
[3] Catalyst-free growth of InAs nanowires on Si (111) by CBE
Gomes, U. P.
Ercolani, D.
Sibirev, N. V.
Gemmi, M.
Dubrovskii, V. G.
Beltram, F.
Sorba, L.
NANOTECHNOLOGY, 2015, 26 (41)
[4] Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
Ikejiri, Keitaro
Noborisaka, Jinichiro
Hara, Shinjiroh
Motohisa, Junichi
Fukui, Takashi
JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 616 - 619
[5] Catalyst-free heteroepitaxial growth of very long InAs nanowires on Si
Hwang, Jeong Woo
Kim, Bum-Kyu
Lee, Sang Jun
Bae, Myung-Ho
Shin, Jae Cheol
CURRENT APPLIED PHYSICS, 2015, 15 : S35 - S39
[6] Catalyst-free growth of lateral InAs nanowires
Wang, Hailing
Wei, Wenqi
Wang, Jianhuan
Feng, Qi
Wu, Shiyao
Yang, Huaixin
Xu, Xiulai
Wang, Ting
Zhang, Jianjun
JOURNAL OF CRYSTAL GROWTH, 2018, 498 : 209 - 213
[7] In situ doping of catalyst-free InAs nanowires
Ghoneim, Hesham
Mensch, Philipp
Schmid, Heinz
Bessire, Cedric D.
Rhyner, Reto
Schenk, Andreas
Rettner, Charles
Karg, Siegfried
Moselund, Kirsten E.
Riel, Heike
Bjoerk, Mikael T.
NANOTECHNOLOGY, 2012, 23 (50)
[8] Heterogeneous nucleation of catalyst-free InAs nanowires on silicon
Gomes, U. P.
Ercolani, D.
Zannier, V.
Battiato, S.
Ubyivovk, E.
Mikhailovskii, V.
Murata, Y.
Heun, S.
Beltram, F.
Sorba, L.
NANOTECHNOLOGY, 2017, 28 (06)
[9] Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks
Soo, M. Teng
Zheng, Kun
Gao, Qiang
Tan, H. Hoe
Jagadish, Chennupati
Zou, Jin
NANO LETTERS, 2016, 16 (07) : 4189 - 4193
[10] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates
Motohisa, J
Noborisaka, J
Takeda, J
Inari, M
Fukui, T
JOURNAL OF CRYSTAL GROWTH, 2004, 272 (1-4) : 180 - 185

← 1 2 3 4 5 →