Reduction of Threading Dislocation Density in 2H-AlN Grown on 6H-SiC(0001) by Minimizing Unintentional Active-Nitrogen Exposure before Growth

被引：33

作者：

Okumura, Hironori ^{[1
]}

Kimoto, Tsunenobu ^{[1
,2
]}

Suda, Jun ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] Kyoto Univ, Photon & Elect Sci & Engn Ctr, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 02期

基金：

日本学术振兴会;

关键词：

ALN; SUBSTRATE; GAN;

D O I：

10.1143/APEX.4.025502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

300-nm-thick AlN layers were grown directly on 6H-SiC(0001) with six Si-C bilayer-height (1.5 nm) steps by rf-plasma-assisted molecular-beam epitaxy (MBE). To avoid unintentional active-nitrogen exposure, AlN was grown just after the nitrogen plasma ignition. By combining optimized Ga pre-deposition and no active-nitrogen exposure, layer-by-layer growth was realized from the first layer of AlN. Screw-type and edge-type threading dislocation densities in the AlN layer were reduced to 6 x 10(4) and 4 x 10(8) cm(-2), respectively. Most of the edge-type dislocations were located at the step edge of the SiC substrate. The dislocation density of the AlN grown on the terrace of the SiC substrate was as low as 8 x 10(7) cm(-2). (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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