Controlling surface states and photoluminescence of porous silicon by low-energy-ion irradiation

被引：15
|
作者：
Du, X. W. [1 ]
Jin, Y. [1 ]
Zhao, N. Q. [1 ]
Fu, Y. S. [1 ]
Kulinich, S. A. [2 ]
机构：
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300072, Peoples R China
[2] Univ British Columbia, Dept Chem, Vancouver, BC V6T 1Z1, Canada
来源：
APPLIED SURFACE SCIENCE | 2008年 / 254卷 / 08期
关键词：
porous silicon; optical properties; Fourier transform infrared spectroscopy ( FTIR); IMPLANTED SILICON; ROOM-TEMPERATURE; OXIDATION; EMISSION; NANOPARTICLES; RAMAN; FTIR;
D O I：
10.1016/j.apsusc.2007.09.075
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Porous silicon ( PS) was irradiated by three kinds of low-energy ions with different chemical activity, namely argon ions, nitrogen ions and oxygen ions. The chemical activity of ions has significant effect on the surface states and photoluminescence (PL) properties of PS, The photoluminescence quenching after argon ions and nitrogen ions irradiation is ascribed to the broken Si-Si bonds, while the PL recovery is attributed to the oxidation of Si-H back bonds. Oxygen ions irradiation leads to the formation of a SiOx layer with oxygen defects and PS shows different PL evolution than PS irradiated by argon ions and nitrogen ions. (c) 2007 Elsevier B. V. All rights reserved.
引用
收藏
页码：2479 / 2482
页数：4
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