Quadruple Cross-Coupled Dual-Interlocked-Storage-Cells-Based Multiple-Node-Upset-Tolerant Latch Designs

被引:48
|
作者
Yan, Aibin [1 ,2 ]
Ling, Yafei [1 ,2 ]
Cui, Jie [1 ,2 ]
Chen, Zhili [1 ,2 ]
Huang, Zhengfeng [3 ]
Song, Jie [1 ,2 ]
Girard, Patrick [4 ]
Wen, Xiaoqing [5 ]
机构
[1] Anhui Univ, Sch Comp Sci & Technol, Hefei 230601, Peoples R China
[2] Anhui Engn Lab IoT Secur Technol, Hefei 230601, Peoples R China
[3] Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China
[4] Univ Montpellier, CNRS, Lab Informat Robot & Microelect Montpellier, F-34095 Montpellier, France
[5] Kyushu Inst Technol, Grad Sch Comp Sci & Syst Engn, Fukuoka 8208502, Japan
基金
中国国家自然科学基金;
关键词
Circuit reliability; radiation hardening; soft error; single-node upset; double-node upset; triple-node upset; HIGH-PERFORMANCE; FLIP-FLOP; CMOS; SEU; COST; SRAM;
D O I
10.1109/TCSI.2019.2959007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
First, this paper proposes a double-node-upset (DNU)-completely-tolerant (DNUCT) latch, featuring quadruple cross-coupled dual-interlocked-storage-cells (DICEs) with a C-element. Due to the existence of sufficient feedback loops, the latch can achieve complete DNU toleration. Second, this paper proposes an improved DNUCT latch (referred to as the TNUCT latch) by inserting a redundant level of C-elements at the output stage to intercept node-upset errors accumulated in the upstream DICEs so as to completely tolerate any possible triple-node-upset (TNU). Simulation results demonstrate the robustness of the proposed latches. These innovative latches are also cost-effective due to the use of high-speed transmission paths, clock gating, and fewer transistors. Compared with the typical TNU hardened latch (TNUHL) design that can completely tolerate any TNU, the proposed TNUCT latch reduces the delay-power-area product by approximate 98%. The proposed latches have less or equivalent sensitivity to process, voltage, and temperature variation effects compared with reference latches.
引用
收藏
页码:879 / 890
页数:12
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