Semipolar blue LEDs arise from high-quality GaN substrates

被引：0
|
作者：
不详
机构：
来源：
LASER FOCUS WORLD | 2007年 / 43卷 / 09期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：15 / 15
页数：1
相关论文
共 50 条
  • [31] Fabrication of high-brightness blue InGaN/GaN MQW LEDs
    Luo, Y
    Han, YJ
    Guo, WP
    Sun, CZ
    Hao, ZB
    Hu, H
    MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING, 2002, 4918 : 197 - 199
  • [32] High brightness violet InGaN/GaN light emitting diodes on semipolar (101¯1¯) bulk GaN substrates
    Tyagi, Anurag
    Zhong, Hong
    Fellows, Natalie N.
    Iza, Michael
    Speck, James S.
    DenBaars, Steven P.
    Nakamura, Shuji
    Japanese Journal of Applied Physics, Part 2: Letters, 1600, 46 (4-7):
  • [33] HIGH-QUALITY GAN GROWN BY REACTIVE SPUTTERING
    ROSS, J
    RUBIN, M
    MATERIALS LETTERS, 1991, 12 (04) : 215 - 218
  • [34] Integration of Photonic Crystals on GaN-Based Blue LEDs Using Silicon Mold Substrates
    Orita, Kenji
    Takase, Yuji
    Fukushima, Yasuyuki
    Usuda, Manabu
    Ueda, Tetsuzo
    Takigawa, Shinichi
    Tanaka, Tsuyoshi
    Ueda, Daisuke
    Egawa, Takashi
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2008, 44 (9-10) : 984 - 989
  • [35] High quality (In)GaN films on homoepitaxial substrates
    Liu, Li
    Zhang, Yong
    Yin, Yian
    SUPERLATTICES AND MICROSTRUCTURES, 2017, 102 : 166 - 172
  • [36] MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs
    Fernández, S
    Naranjo, FB
    Calle, F
    Sánchez-García, MA
    Calleja, E
    Vennegues, P
    Trampert, A
    Ploog, KH
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (11) : 913 - 917
  • [37] INFLUENCE OF BUFFER LAYERS ON THE DEPOSITION OF HIGH-QUALITY SINGLE-CRYSTAL GAN OVER SAPPHIRE SUBSTRATES
    KUZNIA, JN
    KHAN, MA
    OLSON, DT
    KAPLAN, R
    FREITAS, J
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (09) : 4700 - 4702
  • [38] A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
    Wang, Wenliang
    Wang, Haiyan
    Yang, Weijia
    Zhu, Yunnong
    Li, Guoqiang
    SCIENTIFIC REPORTS, 2016, 6
  • [39] A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
    Wenliang Wang
    Haiyan Wang
    Weijia Yang
    Yunnong Zhu
    Guoqiang Li
    Scientific Reports, 6
  • [40] Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
    Prabaswara, Aditya
    Kim, Hyunho
    Min, Jung-Wook
    Subedi, Ram Chandra
    Anjum, Dalaver H.
    Davaasuren, Bambar
    Moore, Kalani
    Conroy, Michele
    Mitra, Somak
    Rogan, Iman S.
    Ng, Tien Khee
    Alshareef, Husam N.
    Ooi, Boon S.
    ACS NANO, 2020, 14 (02) : 2202 - 2211
12345