Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

被引：19
|
作者：
Saxena, Saurabh [1 ]
Kim, Dong Cheol [2 ]
Park, Jeang Hun [2 ]
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] NanoFab Ctr, Varied Innovat Technol, Gyeonggi Do 443270, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期
关键词：
Crystallization; excimer-laser annealing (ELA); Flash-lamp annealing (FLA); low-temperature polycrystalline silicon (poly-Si) (LTPS); thin-film transistors (TFTs); AMORPHOUS-SILICON; SI FILMS; CRYSTALLIZATION; GLASS;
D O I：
10.1109/LED.2010.2064282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of similar to 15 mu m with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm(2)/V . sec, a threshold voltage of-1.3 V, and an on/off current ratio of 10(8).
引用
收藏
页码：1242 / 1244
页数：3
相关论文
共 50 条
  • [21] THIN-FILM TRANSISTORS WITH POLYCRYSTALLINE SILICON PREPARED BY A NEW ANNEALING METHOD
    NAM, KS
    SONG, YH
    BAEK, JT
    KONG, HJ
    LEE, SS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (5A): : 1908 - 1912
  • [22] ELECTRICAL ACTIVATION AND DAMAGE ANNEALING OF BORON-IMPLANTED SILICON BY FLASH-LAMP IRRADIATION
    WIESER, E
    PANKNIN, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01): : 171 - 177
  • [23] A novel self-aligned polycrystalline silicon thin-film transistor using silicide layers
    Ryu, JI
    Kim, HC
    Kim, SK
    Jang, J
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (06) : 272 - 274
  • [24] Integration of field emitter array and thin-film transistor using polycrystalline silicon process technology
    Song, YH
    Lee, JH
    Kang, SY
    Park, JM
    Cho, KI
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 : S436 - S439
  • [25] B20 Weyl Semimetal CoSi Film Fabricated by Flash-Lamp Annealing
    Li, Zichao
    Yuan, Ye
    Huebner, Rene
    Rebohle, Lars
    Zhou, Yan
    Helm, Manfred
    Nielsch, Kornelius
    Prucnal, Slawomir
    Zhou, Shengqiang
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (25) : 30517 - 30523
  • [26] Self-Heating of Laterally Grown Polycrystalline Silicon Thin-Film Transistor
    Watanabe, Kazunori
    Asano, Tanemasa
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (03)
  • [27] A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation
    Pappas, I.
    Hatzopoulos, A. T.
    Tassis, D. H.
    Arpatzanis, N.
    Siskos, S.
    Dimitriadis, C. A.
    Kamarinos, G.
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)
  • [28] A simple and continuous polycrystalline silicon thin-film transistor model for SPICE implementation
    Pappas, I.
    Hatzopoulos, A.T.
    Tassis, D.H.
    Arpatzanis, N.
    Siskos, S.
    Dimitriadis, C.A.
    Kamarinos, G.
    Journal of Applied Physics, 2006, 100 (06):
  • [29] Surface potential-based polycrystalline silicon thin-film transistor model
    Ikeda, Hiroyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (6A): : 3337 - 3346
  • [30] Flexibility of Low Temperature Polycrystalline Silicon Thin-Film Transistor on Tungsten Foil
    Lee, Won Gyu
    Lim, Tae Hoon
    Jang, Jin
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (03)
12345