Effects of Wafer Precleaning and Plasma Irradiation to Wafer Surfaces on Plasma-Assisted Surface-Activated Direct Bonding

被引：14
|
作者：
Takei, Ryohei [1 ]
Yoshida, Kohei [1 ]
Mizumoto, Tetsuya [1 ]
机构：
[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 08期
基金：
日本学术振兴会;
关键词：
SILICON ELECTROOPTIC MODULATOR; NONRECIPROCAL PHASE-SHIFT; INSULATOR WAVE-GUIDE; TEMPERATURE; PHOTODETECTOR; COMPACT; LAYER; LASER;
D O I：
10.1143/JJAP.49.086204
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The plasma-assisted surface-activated bonding technique enables one to directly bond heterogeneous materials. The surface roughness of wafers is an important factor for achieving bonding The effects of precleaning and plasma surface activation processes on the surface roughness are investigated for silicon-on-insulator (SOI). Ce-substituted yttrium iron garnet (Ce YIG), InP and LiNbO3 We found that an appropriate precleaning process reduces the surface roughness Also, the oxygen plasma irradiation to the wafer surface for 10 or 30s smoothens the surfaces We achieved the bonding of SOI-Ce YIG with a strength greater than 1 8 MPa, which is sufficient for application to silicon waveguide optical isolators and circulators (C) 2010 The Japan Society of Applied Physics
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页数：3
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