Die Thickness Optimization for Preventing Electro-Thermal Fails Induced by Solder Voids in Power Devices

被引:0
|
作者
Vitello, Dario [1 ]
Albertinetti, Andrea [1 ]
Rovitto, Marco [1 ]
机构
[1] STMicroelectronics, Via Camillo Olivetti 2, I-20864 Agrate Brianza, MB, Italy
关键词
thin die; solder voids; power device; finite element method; electrical over stressfail;
D O I
10.1109/ECTC.2019.00-34
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Vertical power devices require thin dice to reach high electrical performance especially for automotive market. Beside their several advantages, thin power devices reveal issues related to assembly processes. Die bonding process step typically generates solder voids which can lead to thermal-induced fails. The paper deals with die thickness optimization in order to reduce the risk of failures due to the presence of voids by considering manufacturing limitations. For this purpose, electro-thermal modeling is employed to calculate the temperature at which fail occurs. Further, it allows to estimate the impact of die thickness and solder void size on the device temperature distribution during operating life.
引用
收藏
页码:2091 / 2096
页数:6
相关论文
共 50 条
  • [1] Thermal networks for electro-thermal analysis of power devices
    Codecasa, L
    D'Amore, D
    Maffezzoni, P
    MICROELECTRONICS JOURNAL, 2001, 32 (10-11) : 817 - 822
  • [2] Thermal impact of solder voids in the electronic packaging of power devices
    Zhu, NH
    FIFTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, 1999, : 22 - 29
  • [3] Alterations induced in the structure of intelligent power devices by extreme electro-thermal fatigue
    Khong, B.
    Legros, M.
    Dupuy, P.
    Levade, C.
    Vanderschaeve, G.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 2997 - +
  • [4] Thermal model of power semiconductor devices for electro-thermal circuit Simulations
    Igic, PM
    Mawby, PA
    Towers, MS
    Batcup, S
    2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS, 2002, : 171 - 174
  • [5] Electro-Thermal Modeling of SiC Power Devices for Circuit Simulation
    Yin, Shan
    Wang, Tao
    Tseng, K. J.
    Zhao, Jiyun
    Hu, Xiaolei
    39TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY (IECON 2013), 2013, : 718 - 723
  • [6] Transient electro-thermal modeling of bipolar power semiconductor devices
    1600, Morgan and Claypool Publishers (06):
  • [7] ELECTRO-THERMAL MODELING, CONTROL AND OPTIMIZATION IN POWER DISTRIBUTION NETWORKS
    Weaver, Wayne
    2010 12TH IEEE INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS, 2010,
  • [8] Electro-thermal Models of Power Modules for Stochastic Optimization of Inverters
    Byden, Hannes
    Bourniche, Eric
    Domingues, Gabriel
    Alakula, Mats
    Leblay, Arnaud
    Marquez, Fran
    2023 IEEE TRANSPORTATION ELECTRIFICATION CONFERENCE & EXPO, ITEC, 2023,
  • [9] On the failure of intelligent power devices induced by extreme electro-thermal fatigue. A microstructural analysis
    Khong, B.
    Legros, M.
    Dupuy, P.
    Levadel, C.
    Vanderschaeve, G.
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, 2008, 131-133 : 523 - +
  • [10] Exploiting electro-thermal resonance in high voltage power bipolar devices
    D'Amore, D
    Maffezzoni, P
    ELECTRONICS LETTERS, 1999, 35 (07) : 600 - 602