Hole localization in thermoelectric half-Heusler (Zr0.5Hf0.5)Co(Sb1-xSnx) thin films

被引：4
|
作者：
Heinz, Sven [1 ]
Balke, Benjamin [2 ]
Jakob, Gerhard [1 ]
机构：
[1] Johannes Gutenberg Univ Mainz, Inst Phys, Staudinger Weg 7, D-55099 Mainz, Germany
[2] Univ Stuttgart, Inst Mat Sci, Heisenbergstr 3, D-70569 Stuttgart, Germany
来源：
THIN SOLID FILMS | 2019年 / 692卷
关键词：
Half-Heusler; Thermoelectric; Thin films; RECENT PROGRESS; FERMI-LEVEL; TINISN; SEMICONDUCTOR; ELECTRON; ZRNISN; FIGURE; SYSTEM; METAL; GAP;
D O I：
10.1016/j.tsf.2019.137581
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The (Ti, Zr, Hf)Co(Sb1-xSnx) material class has recently come into focus as an attractive p-type high-temperature thermoelectric material. This study experimentally demonstrates that homogeneous, highly textured (Zr0.5Hf0.5)Co(Sb1-xSnx) thin films can be grown on single crystalline MgO. By varying the sputter power, samples with both positive and negative Seebeck coefficient can be grown. The underlying reason for the sign change is the segregation of Sn nano-inclusions, which lower the effective doping of the half-Heusler matrix. Similarly the Hall constant also switches sign at low temperatures, which is modeled assuming semi-metal behavior and low temperature hole localization in an acceptor band. Both resistivity and Hall constant are well described by this model.
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页数：5
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