Growth of Si1-yCy/Si- and Si1-x-yGexCy/Si-multiple quantum wells using molecular beam epitaxy

被引：1
|
作者：
Hartmann, R
Grutzmacher, D
Muller, E
Gennser, U
Dommann, A
Schroter, P
Warren, P
机构：
[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland
[2] Neutechnikum Buchs, CH-9470 Buchs, Switzerland
[3] Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland
来源：
THIN SOLID FILMS | 1998年 / 318卷 / 1-2期
关键词：
multiple quantum wells; molecular beam epitaxy; photoluminescence;
D O I：
10.1016/S0040-6090(97)01157-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Si/SiC- and Si/SiGeC-multiple quantum well (MQW) structures of different well thicknesses and C-concentrations up to 2.7% have been grown pseudomorphically on Si(001) using molecular beam epitaxy. Near bandedge photoluminescence (PL) is observed for Si/SiC for certain,growth parameters. Substrate temperature and Si growth rate strongly influence the structural and optical properties of the samples, in particular for samples with high C-content. The thermal stability of the Si/SiC-layers was investigated by using FL, high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). At anneal temperatures of 950 degrees C and below the structures relax only by interdiffusion but not by defect or SiC-formation. PL data on a nearly strainless Si/SiGeC-MQW indicate a band alignment of type-I character. (C) 1998 Elsevier Science S.A.
引用
收藏
页码：158 / 162
页数：5
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