Structural study of the InAs quantum-dot nucleation on GaAs(001)

被引：0
|
作者：
Patella, F
Nufris, S
Arciprete, F
Fanfoni, M
Placidi, E
Sgarlata, A
Balzarotti, A
机构：
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Ist Nazl Fis Mat, Rome, Italy
来源：
MICROELECTRONICS JOURNAL | 2003年 / 34卷 / 5-8期
关键词：
quantum-dot nucleation; molecular beam epitaxy; atomic force microscopy;
D O I：
10.1016/S0026-2692(03)00038-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated by atomic force microscopy subsequent stages of the heteroepitaxy of InAs on GaAs(001) from the initial formation of the strained two-dimensional wetting layer up to the development of three-dimensional quantum dots. We evidence structural features that play a role in the two-to-three-dimensional transition and discuss their contribution to the final morphology of the self-assembled nanoparticles. (C) 2003 Elsevier Science Ltd. All rights reserved.
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页码：419 / 422
页数：4
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