Measurement of important circuit parasitics for switching transient analysis of SiC MOSFET and Schottky diode pair

被引：0
|
作者：
Roy, Shamibrota Kishore [1 ]
Basu, Kaushik [1 ]
机构：
[1] IISc Bangalore, Elect Engn Dept, Bangalore, Karnataka, India
来源：
2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2019年
关键词：
SiC MOSFET; SiC SBD; switching transient; parasitics measurement;
D O I：
10.1109/ecce.2019.8911844
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Characterization of external circuit parasitics are important to study the switching dynamics and adverse effects related to that. This paper presents a set of simple experimental measurement techniques to determine different external circuit parasitics relevant for switching transient study of Silicon Carbide (SiC) MOSFET and Schottky barrier diode (SBD) pair. The simulation and experimental results confirm the accuracy of the presented method over a range of operating conditions for a 1.2-kV discrete SiC MOSFET and SBD pair.
引用
收藏
页码：1948 / 1952
页数：5
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