Charging phenomenon of insulators in negative-ion implantation

被引：0
|
作者：
Toyota, Y
Tsuji, H
Nagumo, S
Gotoh, Y
Ishikawa, J
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Kyoto 606-01, Yoshida-honmachi, Sakyo-ku
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00242-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.
引用
收藏
页码：360 / 364
页数：5
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