Charging phenomenon of insulators in negative-ion implantation

被引：0
|
作者：
Toyota, Y
Tsuji, H
Nagumo, S
Gotoh, Y
Ishikawa, J
机构：
[1] Dept. of Electron. Sci. and Eng., Kyoto University, Kyoto 606-01, Yoshida-honmachi, Sakyo-ku
来源：
APPLIED SURFACE SCIENCE | 1996年 / 100卷
关键词：
D O I：
10.1016/0169-4332(96)00242-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.
引用
收藏
页码：360 / 364
页数：5
相关论文
共 50 条
  • [1] Charging phenomenon of insulators in negative-ion implantation
    Toyota, Yoshitaka
    Tsuji, Hiroshi
    Nagumo, Shoji
    Gotoh, Yasuhito
    Ishikawa, Junzo
    Applied Surface Science, 1996, 100-101 : 360 - 364
  • [2] Charging-free negative-ion implantation
    Ishikawa, J
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY - PROCEEDINGS OF THE FOURTEENTH INTERNATIONAL CONFERENCE, PTS 1 AND 2, 1997, (392): : 915 - 918
  • [3] THE CHARGING MECHANISM OF INSULATED ELECTRODE IN NEGATIVE-ION IMPLANTATION
    SAKAI, S
    GOTOH, Y
    TSUJI, H
    TOYOTA, Y
    ISHIKAWA, J
    TANJYO, M
    MATSUDA, K
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 43 - 47
  • [4] Charging mechanism of insulated electrode in negative-ion implantation
    Sakai, S.
    Gotoh, Y.
    Tsuji, H.
    Toyota, Y.
    Ishikawa, J.
    Tanjyo, M.
    Matsuda, K.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1995, 96 (1-2):
  • [5] Slightly negative surface potential and charging model of insulator in the negative-ion implantation
    Tsuji, H
    Ishikawa, J
    Ikeda, S
    Gotoh, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 278 - 281
  • [6] NEGATIVE-ION IMPLANTATION TECHNIQUE
    ISHIKAWA, J
    TSUJI, H
    TOYOTA, Y
    GOTOH, Y
    MATSUDA, K
    TANJYO, M
    SAKAI, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2): : 7 - 12
  • [7] NEGATIVE-ION SOURCE FOR IMPLANTATION AND SURFACE INTERACTION OF NEGATIVE-ION BEAMS
    ISHIKAWA, J
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (04): : 1290 - 1294
  • [8] NEGATIVE-ION SOURCES FOR ION-IMPLANTATION
    HOLMES, AJT
    PROUDFOOT, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 323 - 327
  • [9] Surface modification by negative-ion implantation
    Ishikawa, Junzo
    Tsuji, Hiroshi
    Gotoh, Yasuhito
    SURFACE & COATINGS TECHNOLOGY, 2009, 203 (17-18): : 2351 - 2356
  • [10] CARBON NEGATIVE-ION IMPLANTATION INTO SILICON
    ISHIKAWA, J
    TSUJI, H
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 118 - 122
12345