Investigation of the Effect of Irradiation by a Low-Energy Electron Beam on the Capacitance-Voltage Characteristics of SiO2

被引：0
|
作者：
Kulanchikov, Yu. O. [1 ,2 ]
Vergeles, P. S. [1 ]
Yakimov, E. B. [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol & High Purity Mat, Chernogolovka 142432, Moscow Region, Russia
[2] Natl Univ Sci & Technol MISIS, Moscow 119049, Russia
来源：
JOURNAL OF SURFACE INVESTIGATION | 2021年 / 15卷 / 05期
关键词：
SiO2; MIS structure; C-V characteristics; electron beam; irradiation; space charge; hydrogen; HYDROGEN PENETRATION; SILICON; INTERFACE;
D O I：
10.1134/S1027451021050323
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of electron-beam irradiation on the properties of metal-insulator-semiconductor Al/SiO2/n-Si structures is investigated by the method of measurement of the capacitance-voltage (C-V) characteristics. It is found that charging phenomena and the formation of new centers at the SiO2-Si interface in structures based on n-Si become visible at substantially higher irradiation doses than in the case of p-Si. A decrease in the effective donor concentration as a result of irradiation is revealed. This can be explained by the passivation of phosphor with hydrogen. Annealing for 10 minutes at a temperature of 100 degrees C results in recovery of the effective donor concentration, and after annealing at 250 degrees C, complete reconstruction of the C-V curves to the initial state is observed.
引用
收藏
页码：1045 / 1048
页数：4
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