Nanoscale p-n junction fabrication in silicon due to controlled dopant electromigration

被引：1
|
作者：
Chernyak, L [1 ]
Klimov, M [1 ]
机构：
[1] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 11期
关键词：
D O I：
10.1063/1.1355009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An external electric field (up to 10(6) V/cm) was used for nanoscale p-n junction fabrication in Si doped with Li (Si:Li) in situ in a scanning probe microscope. Creation of nano-p-n junctions was ascribed to the thermally assisted electromigration of Li+ ions. Tunneling I-V spectroscopy provided evidence for a conversion of the electrical conductivity type from p to n. A local temperature increase during an electric field-induced p-n junction fabrication was estimated to be up to 160 degreesC. (C) 2001 American Institute of Physics.
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页码：1613 / 1615
页数：3
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