Magnetoresistance enhancement in a perpendicular (Co/Pt)4/Co/IrMn/(Co/Pt)2/Co structure

被引:1
|
作者
Feng, Jiafeng [1 ,2 ]
Wei, H. X. [1 ]
Ren, Yong [3 ]
Li, Xinxi [4 ]
Han, X. F. [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China
[3] Southwest Univ Sci & Technol, State Key Lab Environm Friendly Energy Mat, Mianyang 621010, Peoples R China
[4] China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621999, Peoples R China
基金
北京市自然科学基金;
关键词
EXCHANGE BIAS; TEMPERATURE; ANISOTROPY;
D O I
10.1063/5.0095526
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate the magnetoresistance (MR) effect and magnetic properties in (Co/Pt)(4)/Co/IrMn (SFM) and (Co/Pt)(4)/Co/IrMn/(Co/Pt)(2)/Co (DFM) structures with (Co/Pt)(4)/Co and (Co/Pt)(2)/Co multilayers having a perpendicular magnetic anisotropy. Despite the exchange bias field, the antiferromagnetic IrMn layer itself influences the coercivity (H-c) and MR differently for both types of structures when the IrMn layer is thin. A suppressed H-c and an enhanced MR in the DFM samples are obtained compared with those in the SFM samples. The maximum MR reaches up to (0.6 +/- 0.1)% when the IrMn thickness (t(IrMn)) of the DFM samples varies from 1.5 to similar to 5 nm, but the MR value of the SFM samples remains (0.1 +/- 0.05)% with the same t(IrMn) range. The suppressed H-c and the enhanced MR in the DFM samples may be due to the formation of an antiferromagnetic-type contact when large antiferromagnetic domains in the IrMn layer are sandwiched by (Co/Pt)(4)/Co and (Co/Pt)(2)/Co multilayers. Published under an exclusive license by AIP Publishing.
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页数:6
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