0.18 μm optical lithography performances using an alternating DUV phase shift mask

被引：7

作者：

Trouiller, Y ^{[1
]}

Buffet, N ^{[1
]}

Mourier, T ^{[1
]}

Schiavone, P ^{[1
]}

Quere, Y ^{[1
]}

机构：

[1] CEA G, LETI, F-38054 Grenoble 09, France

来源：

OPTICAL MICROLITHOGRAPHY XI | 1998年 / 3334卷

关键词：

D O I：

10.1117/12.310761

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The phase shift mask (PSM) is a key emerging technology thought to be extending 248 nm lithography. In this paper, we describe the lithographic performances of Shipley UV5 photoresist on SiOxNy Bottom Anti Reflective coating (BARC), using alternating PSM and ASM/90 Deep-UV stepper. Results on 0.18 mu m design rules are presented: lithographic performances, comparison between PSM and binary mask, sub 0.18 mu m performances ({1}) and the ultimate resolution of this technology are reported. To conclude we demonstrated the 0.18 mu m lithography feasability with alternating mask and KrF stepper, and showed that all the necessary tools are today available to achieve such goals.

引用

页码：25 / 35

页数：3

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