High power planar interconnect for high frequency converters

Packaging technologies for power electronic devices have not kept pace with the performance advancements that power semiconductor devices over the past decade. Today's devices can operate at high voltage levels, at higher currents and at higher switching speeds. Chip and wire packages and modules impose sever limitations on power device applications in electrical, thermal, volumetric and reliability performance. The high resistance, inductance and radiated EMI of the wire bond chip connections cause excessive losses and limit switching frequencies. The wire bonds are a significant factor in device reliability and limit how close devices can be place, limiting functional density. Innovative interconnect approaches such as flip chip have a difficult time handling the high current levels and the high thermal loads and are generally not available.