Suppression of boron-oxygen defects in p-type Czochralski silicon by germanium doping

被引：27

作者：

Yu, Xuegong ^{[1
]}

Wang, Peng ^{[1
]}

Chen, Peng ^{[1
]}

Li, Xiaoqiang ^{[1
]}

Yang, Deren ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 05期

基金：

中国国家自然科学基金;

关键词：

MINORITY-CARRIER LIFETIME; SOLAR-CELLS; DEGRADATION; CENTERS; SI;

D O I：

10.1063/1.3475486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the impact of germanium (Ge) doping on the boron-oxygen (B-O) defects in p-type Czochralski (CZ) silicon. It is found that germanium can effectively suppress the formation of B-O defects, whereby the reduction percentage of B-O defect concentration increases with the Ge content. The efficiency of Ge-doped CZ silicon solar cell and the power output of corresponding module both exhibit a significantly lower loss. Based on the fact of a relatively lower concentration of O-2i existing in GCZ silicon, it is believed that the suppression of B-O defects is a result of Ge improving the diffusion barrier of O-i. (C) 2010 American Institute of Physics. [doi:10.1063/1.3475486]

引用

页数：3

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