机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Jia, Xuefeng
[1
,2
,3
]
Wang, Lijun
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Wang, Lijun
[1
,2
,3
]
Zhuo, Ning
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhuo, Ning
[1
,2
]
Zhang, Jinchuan
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhang, Jinchuan
[1
,2
]
Zhai, Shenqiang
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhai, Shenqiang
[1
,2
]
Liu, Junqi
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Junqi
[1
,2
,3
]
Liu, Shuman
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Shuman
[1
,2
,3
]
Liu, Fengqi
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Fengqi
[1
,2
,3
]
Wang, Zhanguo
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Wang, Zhanguo
[1
,2
,3
]
机构:
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[2] Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China
[3] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 101408, Peoples R China
Transverse Bragg Resonance;
Single Longitudinal Mode;
Beam Quality;
D O I:
10.1166/jnn.2018.16052
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
A transverse Bragg resonance (TBR) waveguide was applied in the broad area quantum cascade lasers (QCLs). The transverse Bragg grating with phase shift (defect) in the middle was realized by standard optical lithography. Transfer matrix method was used to analyze the modal gain. Spectral and far-field properties were compared for QCLs with different TBR grating periods. Combined the second-order grating with the TBR grating, single longitudinal emission at 6.9 mu m with good beam quality was achieved for broad area QCL with ridge width of 150 mu m. The simple and low-cost fabrication process for realizing single longitudinal mode emission with good beam quality in broad area QCL is significant for future applications.
机构:
Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, CanadaUniv Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
Bijlani, Bhavin J.
Helmy, Amr S.
论文数: 0引用数: 0
h-index: 0
机构:
Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, CanadaUniv Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
机构:
Lucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USALucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USA
Capasso, F
Gmachl, C
论文数: 0引用数: 0
h-index: 0
机构:
Lucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USALucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USA
Gmachl, C
Sivco, DL
论文数: 0引用数: 0
h-index: 0
机构:
Lucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USALucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USA
Sivco, DL
Cho, AY
论文数: 0引用数: 0
h-index: 0
机构:
Lucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USALucent Technol, Bell Labs, Semicond Phys Res Dept, Murray Hill, NJ 07974 USA