Features of the Surface Region of the Semiconductor Structure Formed by Metal-Assisted Chemical Etching of Single-Crystal Silicon

被引：4
|
作者：
Melnik, N. N. [1 ]
Tregulov, V. V. [2 ]
Rybin, N. B. [3 ]
Ivanov, A. I. [2 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, 53 Leninskii Pr, Moscow 119991, Russia
[2] Ryazan State Univ, 46 Svobody St, Ryazan 390000, Russia
[3] Ryazan State Radio Engn Univ, 59-1 Gagarina St, Ryazan 390005, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2019年 / 46卷 / 10期
关键词：
metal-assisted chemical etching; metal-semiconductor structure; Raman scattering; capacitance-voltage characteristic;
D O I：
10.3103/S1068335619100063
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The surface region of the semiconductor structure containing a porous layer formed by metal-assisted etching of a single-crystal silicon substrate is studied by scanning electron microscopy, Raman spectroscopy, and capacitance-voltage characteristic measurements. A donor-depleted layer is detected within the porous film near its outer surface.
引用
收藏
页码：324 / 327
页数：4
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