Structure and dielectric relaxation of double-perovskite La2CuTiO6 ceramics

Dielectric properties of La2CuTiO6 ceramics were investigated in a broad frequency and temperature range. There is only one dielectric relaxation in the curve of temperature dependence of dielectric properties for La2CuTiO6 ceramics. This dielectric relaxation is a thermal activated process. The bulk and grain boundary resistances can be obtained from results of the least-mean-square fitting on impedance spectra. The conduction mechanism of the present ceramics is also a thermal activated process. The activation energy of dielectric relaxation is almost same as that of electrical conductivity and this indicates the closely correlation between the dielectric relaxation and electrical conductivity. The dielectric relaxation in the present ceramics should be attributed to the mixed-valent structure (Cu+/Cu2+ and Ti3+/Ti4+), which is induced from the oxygen vacancy. (c) 2010 American Institute of Physics. [doi:10.1063/1.3446846]