Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor

被引：0
|
作者：
Liu, Jifeng [1 ,2 ]
Michel, Jurgen [2 ]
Kimerling, Lionel C. [2 ]
机构：
[1] Dartmouth Coll, Thayer Sch Engn, 8000 Cummings Hall, Hanover, NH 03755 USA
[2] MIT, Microphotn Ctr, Cambridge, MA 02139 USA
来源：
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY | 2010年
关键词：
ELECTROABSORPTION MODULATORS; ROOM-TEMPERATURE; HIGH-PERFORMANCE; PHOTODETECTORS; GAIN; PLATFORM; SILICON;
D O I：
10.1109/PHOTONICS.2010.5698891
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this "old" semiconductor material used for the first transistor more than 60 years ago.
引用
收藏
页码：325 / +
页数：2
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