modeling;
grain boundaries;
ferroelectric properties;
BaTiO3 and titanates;
capacitors;
D O I:
10.1016/S0955-2219(98)00293-3
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Modeling of electronic materials and devices takes place on three different levels. (1) the device functions which are linked to the electronic circuit, (2) the solid state physics which relates the microscopic and macroscopic properties, and (3) the processing which is employed to build up the material and the device. On all three levels, Si-based semiconductor technology today extensively relies on comprehensive models implemented in detailed simulation tools. Due to the much higher complexity in composition and structure, as well as the huge spectrum of functions, the modeling of electroceramic materials and devices is still in its infancy. Currently, we see a tr end towards enhancing electroceramics modeling efforts mainly to support the numerous activities of integrating this class of materials into the Si world. This review covers selected examples of integrated electroceramic thin film devices which demonstrate the present state-of-the-art. Emphasis is placed on the understanding of the statics and dynamics of the ferroelectric polarization as well as on properties originating in the defect structure of the perovskite lattice. The review attempts to identify fields where great improvements have been mane in recent years, 'blank' areas of lack of under standing, and trails which might be employed to anticipate future developments. (C) 1999 Elsevier Science Limited. All rights reserved.
机构:
Associated Cement Cos Ltd, Res & Consultancy Directorate, Thane 400604, IndiaAssociated Cement Cos Ltd, Res & Consultancy Directorate, Thane 400604, India
Chatterjee, AK
ASIAN JOURNAL OF PHYSICS, VOL 6 NOS 1 AND 2, JANUARY-MARCH 1997: PROCEEDINGS OF THE DAE-BRNS SYMPOSIUM ON ELECTROCERAMICS,
1997,
: 1
-
10
机构:
Tata Research Development and Design Centre, 54 B, Hadapsar Industrial Estate, Pune 411 013, IndiaTata Research Development and Design Centre, 54 B, Hadapsar Industrial Estate, Pune 411 013, India
机构:
Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Yang, Zhao
Hu, Qiang
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Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Hu, Qiang
Chen, Yingquan
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Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Chen, Yingquan
Yang, Haiping
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Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Yang, Haiping
Wang, Chi-Hwa
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机构:
Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 117585, SingaporeHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Wang, Chi-Hwa
Bi, Xiaotao T.
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Univ British Columbia, Clean Energy Res Ctr, Dept Chem & Biol Engn, Vancouver, BC V6T 1Z3, CanadaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China
Bi, Xiaotao T.
Chen, Hanping
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Huazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R ChinaHuazhong Univ Sci & Technol, Sch Energy & Power Engn, State Key Lab Coal Combust, Wuhan 430074, Peoples R China