Modeling of electroceramics - Applications and prospects

被引:29
|
作者
Waser, R
机构
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, D-52056 Aachen, Germany
关键词
modeling; grain boundaries; ferroelectric properties; BaTiO3 and titanates; capacitors;
D O I
10.1016/S0955-2219(98)00293-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Modeling of electronic materials and devices takes place on three different levels. (1) the device functions which are linked to the electronic circuit, (2) the solid state physics which relates the microscopic and macroscopic properties, and (3) the processing which is employed to build up the material and the device. On all three levels, Si-based semiconductor technology today extensively relies on comprehensive models implemented in detailed simulation tools. Due to the much higher complexity in composition and structure, as well as the huge spectrum of functions, the modeling of electroceramic materials and devices is still in its infancy. Currently, we see a tr end towards enhancing electroceramics modeling efforts mainly to support the numerous activities of integrating this class of materials into the Si world. This review covers selected examples of integrated electroceramic thin film devices which demonstrate the present state-of-the-art. Emphasis is placed on the understanding of the statics and dynamics of the ferroelectric polarization as well as on properties originating in the defect structure of the perovskite lattice. The review attempts to identify fields where great improvements have been mane in recent years, 'blank' areas of lack of under standing, and trails which might be employed to anticipate future developments. (C) 1999 Elsevier Science Limited. All rights reserved.
引用
收藏
页码:655 / 664
页数:10
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