Charge carrier mobility in gallium nitride

被引：12
|
作者：
Malyk, Orest [1 ]
机构：
[1] Lviv Polytech Natl Univ, Semicond Elect Dept, UA-79013 Lvov, Ukraine
来源：
DIAMOND AND RELATED MATERIALS | 2012年 / 23卷
关键词：
Gallium nitride; Defects; Defect characterization; MOLECULAR-BEAM EPITAXY; CRYSTAL-LATTICE DEFECTS; GAN BUFFER LAYERS; DEFORMATION POTENTIALS; PHONON SCATTERING; ALUMINUM NITRIDES; ELECTRON-MOBILITY; EFFECTIVE-MASS; DOPED GAN; SEMICONDUCTORS;
D O I：
10.1016/j.diamond.2011.12.018
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The processes of the charge carrier scattering on the short-range potential caused by interaction with polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain, neutral and ionized impurities in wurtzite n-GaN with impurity concentration 1.1 x 10(16) cm(-3) divided by 1.9 x 10(18) cm(-3) and in wurtzite p-GaN with impurity concentration 1.9 x 10(19) cm(-3) divided by 2.6 x 10(20) cm(-3) are considered. The temperature dependences of electron mobility in the range 15 divided by 500 K and hole mobility in the range 100 divided by 1000 K are calculated. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：23 / 27
页数：5
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