Defects in GaSb studied by coincidence Doppler broadening measurements

被引：4
|
作者：
Hu, WG [1 ]
Wang, Z
Dai, YQ
Wang, SJ
Zhao, YW
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing, Peoples R China
来源：
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS | 2004年 / 445-6卷
关键词：
coincidence Doppler broadening; defects; GaSb; positron annihilation;
D O I：
10.4028/www.scientific.net/MSF.445-446.114
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.
引用
收藏
页码：114 / 116
页数：3
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