Electrical properties of a highly oriented, textured thin film of the ionic conductor Gd:CeO2-δ on (001) MgO

被引：51

作者：

Chen, L

Chen, CL

Chen, X

Donner, W

Liu, SW

Lin, Y

Huang, DX

Jacobson, AJ

机构：

[1] Univ Houston, Dept Chem, Houston, TX 77204 USA

[2] Univ Houston, Ctr Mat Chem, Houston, TX 77204 USA

[3] Univ Houston, Dept Phys, Houston, TX 77204 USA

[4] Univ Houston, Texas Ctr Superconduct & Adv Mat, Houston, TX 77204 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1629378

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly oriented ionic conductor gadolinium-doped CeO2-delta (Ce0.8Gd0.2O2-delta) thin films have been grown on single-crystal (001) MgO substrates by pulsed-laser ablation. The films are highly c-axis oriented with cube-on-cube epitaxy, as shown by x-ray diffraction and electron microscopy. The interface relationship is, surprisingly, found to be (001)(film)//(001)(sub) and [100](film)//[100](sub) with an extremely large lattice misfit of more than 28%. Ac impedance measurements in the temperature range of 500 to 800 degreesC reveal that electrical conductivity is predominantly ionic over a very broad oxygen partial pressure range from pO(2) from 1x10(-19) atm to 1 atm. The activation energy E-a for ionic conductivity measured on unannealed films is 0.86 eV, but after heat treatment, E-a decreases to 0.74 eV. (C) 2003 American Institute of Physics.

引用

页码：4737 / 4739

页数：3

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