Reflection electron microscopy observation of formation process of palladium silicide islands on silicon (111) surface

被引：2
|
作者：
Takeguchi, M [1 ]
Tanaka, M [1 ]
Yasuda, H [1 ]
Furuya, K [1 ]
机构：
[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050003, Japan
来源：
SCRIPTA MATERIALIA | 2001年 / 44卷 / 8-9期
关键词：
transmission electron microscopy (TEM); silicon (Si); palladium (Pd); silicide; reflection electron microscopy (REM);
D O I：
10.1016/S1359-6462(01)00775-8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The formation of process of Pd2Si islands on the Si(111) surface of a bulk specimen was observed by reflection electron microscopy (REM). Depression of the surface areas around the islands did not occur during the island growth. Therefore, Si atoms of the surrounding surface were not supplied to the Pd2Si island, and that Si atoms beneath the islands dominantly react with Pd atoms to form the Pd2Si islands.
引用
收藏
页码：2363 / 2367
页数：5
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