In situ ultrahigh vacuum transmission electron microscopy studies of palladium silicide island formation on silicon(111) 7x7 surface

被引：0
|
作者：
Takeguchi, M [1 ]
Liu, J [1 ]
Zhang, Q [1 ]
Tanaka, M [1 ]
Furuya, K [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
来源：
THIN SOLID FILMS | 2003年 / 424卷 / 01期
关键词：
transmission electron microscopy; silicide; island growth;
D O I：
10.1016/S0040-6090(02)00901-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pd was deposited onto Si (111) 7X7 surface at approximately 700 K inside an ultrahigh vacuum transmission electron microscope. Plan-viewed transmission electron microscopy (TEM) observation indicated that the islands have two kinds of shapes, round and rectangular (one-dimensional) ones. In a diffraction pattern for the rectangular islands, extra spots along the (110) direction of the Si surface, spacing of which is 1/8 times as long as that of Si (220) spots, were seen. A high resolution TEM image showed the corresponding superstructure in the rectangular islands. In situ observation of the growing process of the rectangular islands showed repeat of introduction and relief of strains during the growth, suggesting that such superstructure would be constructed by stacking compositionally different phases or introducing defects so that the periodically maximized strain is relieved. (C) 2002 Elsevier Science B.V. All rights reserved.
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收藏
页码：28 / 32
页数：5
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