Annealing studies of visible light emission from silicon nanocrystals produced by implantation

被引：0
|
作者：
Ghislotti, G
Nielsen, B
DiMauro, LF
Sheey, B
Mutti, P
Pifferi, A
Taroni, P
Valenti, L
Corni, F
Tonini, R
机构：
来源：
ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996 | 1997年 / 452卷
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T [工业技术];
学科分类号：
08 ;
摘要：
The annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 degrees C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 mu s - 0.3 ms).
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页码：105 / 110
页数：6
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