UHF Wideband GaAs MMIC LNA

被引：0
|
作者：
Seyfollahi, Alireza [1 ,2 ]
Jiang, Nianhua [1 ,2 ]
Garcia, Dominic [1 ]
Bornemann, Jens [2 ]
机构：
[1] Natl Res Council Canada, Herzberg Astron & Astrophys, Victoria, BC, Canada
[2] Univ Victoria, Dept Elect & Comp Engn, Victoria, BC, Canada
来源：
2021 IEEE 19TH INTERNATIONAL SYMPOSIUM ON ANTENNA TECHNOLOGY AND APPLIED ELECTROMAGNETICS (ANTEM) | 2021年
关键词：
MMICs; low-noise amplifiers; GaAs pHEMT; wideband;
D O I：
10.1109/ANTEM51107.2021.9518755
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wideband room temperature UHF-band MMIC low noise amplifier based on 0.15 mu m pHEMT GaAs technology is presented. The amplifier achieves about 30 dB gain over a five-octave frequency range from 300 MHz to 1.5 GHz with minimum noise of 0.55 dB at room temperature. The two-stage amplifier utilizes an on-chip gain equalizer at the output and has a gain flatness of 3 dB over the 5:1 band in the fully packaged enclosure.
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页数：2
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